to-92 plastic-encapsulate transistors A733 transistor (pnp) feature power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -100 ma p c collector power dissipation 250 mw t j junction temperature 150 t stg junction and storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = -50ua,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -50ua, i c =0 -5 v collector cut-off current i cbo v cb = -60v, i e =0 -0.1 ua emitter cut-off current i ebo v eb = -5 v, i c =0 -0.1 ua dc current gain h fe v ce = -6v, i c = -1ma 90 200 600 collector-emitter saturation voltage v ce (sat) i c = -100ma, i b =- 10ma -0.18 -0.3 v base-emitter voltage v be v ce =-6v,i c =-1.0ma -0.58 -0.62 -0.68 v transition frequency f t v ce =-6v,i c =-10ma 100 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mh z 6 pf noise figure nf v ce =-6v,i c =-0.3ma, rg=10k ? ,f=100h z 20 db classification of h fe rank r q p k range 90-180 135-270 200-400 300-600 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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